MRF6S21190HR3 MRF6S21190HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
2220
2060
15
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout
= 54 Watts Avg.
2080 22002160
2180
2120
2100
13.5
18.5
18
17.5
17
?2.5
34
32
30
28
0
?1
?1.5
?2
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
?24
?4
?8
?16
?20
η
D
, DRAIN
EFFICIENCY (%)
2140
G
ps
, POWER GAIN (dB)
IRL
Gps
13.5
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout
= 86 Watts Avg.
12.5
17
16.5
16
15.5
15
14.5
14
?4
42
38
36
34
?2
?2.5
?3
?3.5
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
?25
?5
?10
?15
?20
η
D
, DRAIN
EFFICIENCY (%)
Figure 5. Two-Tone Power Gain versus
Output Power
10 200100
13
18
1
Pout, OUTPUT POWER (WATTS) PEP
VDD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
17
16
G
ps
, POWER GAIN (dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
?20
Pout, OUTPUT POWER (WATTS) PEP
10
?30
?40
100
?60
?50
VDD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
200
IDQ
= 2400 mA
2000 mA
IDQ
= 800 mA
2000 mA
2400 mA
Single?Carrier W?CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
VDD= 28 Vdc, Pout
= 86 W (Avg.), I
DQ
= 1600 mA
Single?Carrier W?CDMA, 3.84 MHz Channel Banwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
15
1600 mA
1200 mA
800 mA
1200 mA
1600 mA
14
14.5
15.5
16
16.5
?0.5
26
VDD= 28 Vdc, Pout
= 54 W (Avg.), I
DQ
= 1600 mA
?12
2220
2060 21602080 22002100
2120
2140
2180
13
40
14
ηD
ηD
相关PDF资料
MRF6S23100HSR5 MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S23140HSR5 MOSFET RF N-CHAN 28W 28W NI-880S
MRF6S24140HS IC MOSFET RF N-CHAN NI-880S
MRF6S27015NR1 IC MOSFET RF N-CHAN TO270-2
MRF6S27050HSR5 IC MOSFET RF N-CHAN NI-780S
MRF6S27085HSR5 MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S9045NR1 MOSFET RF N-CH 28V 10W TO-270-2
MRF6S9060NR1 MOSFET RF N-CH 28V 14W TO-270-2
相关代理商/技术参数
MRF6S23100H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S23100HR3 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S23100HR5 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HSR3 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HSR5 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HXX 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Dield Effect Transistors
MRF6S23140H_V2 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors